Transition-metal oxides under strong electric fiels, from resistive switching to artificial synapses and neurons

Par Marcelo Rozenberg, CNRS, LPS, Université Paris Sud

Mercredi 06 Juin, 14h30, Salle des séminaires (215), 2ème étage, Bâtiment A4N

Abstract :

The information age we live in is supported on a physical under-layer of electronic hardware, which originates in condensed matter physics research. The mighty progress made in silicon based technology seemed endless. However, with the smallest feature size of transistors reaching down to mere 10 nm, this technology is finding an unavoidable physical limit. This calls for exploration of new alternatives. Neuromorphic inspired systems are making fast progress. But this is based either on dedicated hardware made with conventional electronics, or in software, such Deep Neural
Networks, running in conventional computers. Resistive switching phenomena opens the way to explore a radical solution, namely, the implementation of simple devices with the required bio-inspired functionalities to directly build neuromorphic systems. In this talk we shall describe recent efforts towards this goal using transition metal oxides, including Mott strongly correlated systems. We shall describe two types of resistive switching, volatile and non-volatile. The latter is now much better understood and is surprisingly ubiquitous among transition metal oxides. This functionality may serve to implement analogue synapses. On the other hand, the former, is observed in strongly correlated Mott systems and rather remarkably may realize the electric function of a “leaky-integrate-and-fire” neuron. We shall describe our recent modeling efforts along these lines.

Some significant articles
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Universal Electric‐Field‐Driven Resistive Transition in Narrow‐Gap Mott Insulators.
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​Short introduction to non-volatile systems Resistive Switching.
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